BF421,112 datasheet

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• Маркировка
  BF421,112
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors BF421,112 Current - Collector (ic) (max): 50mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 25mA, 20V Frequency - Transition: 60MHz Mounting Type: Through Hole Package / Case: TO-92-3 (Standard Body), TO-226 Power - Max: 830mW Series: - Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 30mA Voltage - Collector Emitter Breakdown (max): 300V Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: 300 V Collector- Emitter Voltage VCEO Max: 300 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.05 A Gain Bandwidth Product fT: 60 MHz (Min) DC Collector/Base Gain hfe Min: 50 at 25 mA at 20 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Maximum Power Dissipation: 830 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 1000 Other Names: 933419660112, BF421
• Количество страниц
  6 шт.
• Формат
  PDF

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• Размер файла
  52,10 KB

BF421,112 datasheet скачать

BF421,112 datasheet